Gallium Oxide Epiwafers for Power Electronics
The Problem
Power electronics are the backbone of electrification, from electric grids and EVs to industrial equipment and defense systems. Existing semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are approaching their physical limits in ultra-high-voltage applications, leading to higher energy losses, larger systems, and lower efficiency.As electricity demand and power densities continue to increase, the industry requires a new generation of semiconductor materials that can operate at higher voltages while reducing losses and improving performance.
The Solution
NextGO Epi produces high-quality gallium oxide (Ga₂O₃) epitaxial wafers for next-generation power semiconductors. Using a proprietary MOCVD manufacturing process, the company enables device manufacturers to build ultra-wide-bandgap semiconductors capable of operating at significantly higher voltages with lower power losses than today’s leading technologies.NextGO Epi is scaling towards industrial production for applications including electricity grids, EV power electronics, industrial drives, and renewable energy infrastructure.
Why we invested
The Vireo Electrification Fund Portfolio
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Gallium Oxide Epiwafers for Power Electronics
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